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HomeProduct name listZrD-CO4

ZrD-CO4

  • Molecular Weight: 0
  • MDL number: MFCD16875687
  • Update Date: 2025-01-27 09:38:02

What is ZrD-CO4?

The Uses of ZrD-CO4

Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

General Description

Atomic number of base material: 40 Zirconium

Properties of ZrD-CO4

Boiling point: 110 °C/0.5 mmHg (lit.)
Density  1.27 g/mL±0.01 g/mL at 25 °C (lit.)
Flash point: 108 °C

Safety information for ZrD-CO4

Computed Descriptors for ZrD-CO4

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